Multi-terahertz sidewall-etched varactor diodes and their application in submillimetre-wave sampling circuits

Electronics Letters

Volumn 29, Issue 25, 1993, Pages 2227-2228

  Allen, S T ^a   Bhattacharya, U ^a   Rodwell, M J W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Microwave devices; Semiconductor devices; Varactors

Indexed keywords

CAPACITANCE; ELECTRIC LINES; ELECTRIC RESISTANCE; ETCHING; LITHOGRAPHY; MICROWAVE DEVICES; OHMIC CONTACTS; PRODUCT DESIGN; PULSE GENERATORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CUTOFF FREQUENCY; NONLINEAR TRANSMISSION LINES; SUBMILLIMETER WAVE SAMPLING CIRCUITS;

VARACTORS;

EID: 0027913145     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931495     Document Type: Article

References (6)

1. RODWELL, KAMEGAWA, M., YU, R.Y., CASE, M.G., CARMAN, E., and GIBONEY, K.S.: ‘GaAs nonlinear transmission lines for picosecond generation and millimeter-wave sampling’, IEEE Trans., 1991, MTT-39, (7), pp. 1194-1204
2. SZE, S.M.: ‘Physics of semiconductor devices’ (John Wiley and Sons, New York, 1981), pp. 99-101
3. GELMONT, B., SHUR, M., and MATTAUCH, R.J.: ‘Capacitance-voltage characteristics of microwave Schottky diodes’, IEEE Trans., 1991, MTT-39, (5), pp. 857-862
4. VAWTER, G.A., COLDREN, L.A., MERZ, J.L., and HU, E.L.: ‘Nonselective etching of GaAs/ AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load-locked system’, Appl. Phys. Lett., 1987, 51, (10), pp. 719-721
5. YU, R.Y., CASE, M.G., KAMEGAWA, M., SUNDARAM, M., RODWELL, M.J.W., and GOSSARD, A.W.: ‘275GHz 3-mask integrated GaAs sampling circuit’, Electron. Lett., 1990, 26, (13), pp. 949-950
6. SHAKOURI, M.S., BLACK, A., AULD, B.A., and BLOOM, D.M.: ‘500GHz MMIC sampling wafer probe’, Electron. Lett., 1993, 29, (6), pp. 557-558