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Volumn 164-166, Issue PART 2, 1993, Pages 973-976
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An application of the statistical shift model to the inverted Meyer-Neldel, MN, relationship in heavily-doped microcrystalline Si, μc-Si
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS MATERIALS;
DOPING (ADDITIVES);
MATHEMATICAL MODELS;
SOLID STATE PHYSICS;
BAND EDGE ALIGNMENT;
CONDUCTIVITY ACTIVATION ENERGY;
DARK CONDUCTIVITY;
FERMI LEVEL;
HEAVILY DOPED MICROCRYSTALLINE SILICON;
INVERTED MEYER-NEDEL RELATIONSHIP;
SILICON CRYSTALLITES;
STATISTICAL SHIFT MODEL;
SILICON;
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EID: 0027906988
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-3093(93)91160-5 Document Type: Article |
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Times cited : (39)
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References (8)
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