Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures

Journal of Crystal Growth

Volumn 132, Issue 3-4, 1993, Pages 435-443

  Sasaki, Tatsuya ^a   Kitamura, Mitsuhiro ^a   Mito, Ikuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; ENERGY GAP; GASES; INTERFACES (MATERIALS); MASKS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SURFACE PHENOMENA;

BANDGAP ENERGY SHIFT; GAS PHASE DIFFUSION; INDIUM GALLIUM ARSENIC PHOSPHIDE; INDIUM GALLIUM ARSENIDE; METALORGANIC VAPOR PHASE EPITAXY; MULTIPLE QUANTUM WELL STRUCTURES; SURFACE MIGRATION;

EPITAXIAL GROWTH;

EID: 0027906407     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(93)90069-9     Document Type: Article

References (19)

1. Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth