Electronic properties of a-SiNx:H thin film diodes

Materials Research Society Symposium Proceedings

Volumn 297, Issue , 1993, Pages 987-992

  Shannon, J M ^a   Sandoe, J N ^a   French, I D ^a   Annis, A D ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; BAND STRUCTURE; ELECTRON EMISSION; ELECTRON TUNNELING; ELECTRONIC PROPERTIES; HYDROGENATION; SILICON NITRIDE; STRESS ANALYSIS; THIN FILM DEVICES;

CURRENT TRANSPORT; FERMI LEVEL; HYDROGENATED AMORPHOUS SILICON NITRIDE ALLOYS; METAL SEMICONDUCTOR METAL DIODES; OPTICAL BAND GAP; REVERSE BIASSED METAL SEMICONDUCTOR CONTACTS; THERMIONIC FIELD EMISSION; TUNNELING EFFECTIVE MASS;

SEMICONDUCTOR DIODES;

EID: 0027883303     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-297-987     Document Type: Conference Paper

References (13)