Submicron Schottky-Collector AlAs/GaAs Resonant Tunnel Diodes

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 407-410

  Allen, S T ^a   Reddy, M ^a   Rodwell, M J W ^a   Smith, R P ^b   Martin, S C ^b   Liu, J ^b   Muller, R E ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; III-V SEMICONDUCTORS; MICROWAVE OSCILLATORS; QUANTUM WELL LASERS; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS; ELECTRON BEAMS; OSCILLATORS (ELECTRONIC); TRANSISTORS; TUNNEL DIODES;

DC PARAMETERS; MAXIMUM FREQUENCY OF OSCILLATIONS; MICROWAVE PARAMETERS; QUANTUM-WELLS; SCHOTTKY COLLECTOR; SUBMICRON;

RESONANT TUNNELING DIODES; SCHOTTKY BARRIER DIODES;

BANDWIDTH; RESONANT TUNNEL DIODES (RTDS); SUBMICRON;

EID: 0027880067     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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