Short-channel effects in deep-submicrometer SOI MOSFETs

IEEE International SOI Conference

Volumn , Issue , 1993, Pages 112-113

  Su, Lisa T ^a   Jacobs, Jarvis B ^a   Chung, James E ^a   Antoniadis, Dimitri A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC NETWORK PARAMETERS; GATES (TRANSISTOR); OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

CHARGE SHARING; DRAIN INDUCED BARRIER LOWERING; MID GAP WORKFUNCTION; SHORT CHANNEL EFFECTS; SUBMICROMETER REGION;

MOSFET DEVICES;

EID: 0027879096     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)