메뉴 건너뛰기





Volumn 297, Issue , 1993, Pages 619-624

`Fast' and `slow' metastable defects in a-Si:H

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEGRADATION; ELECTRON TRANSPORT PROPERTIES; HYDROGENATION; LIGHT; MATHEMATICAL MODELS; ORDER DISORDER TRANSITIONS; REACTION KINETICS; SEMICONDUCTING SILICON;

EID: 0027873907     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-297-619     Document Type: Conference Paper
Times cited : (6)

References (14)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.