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Volumn 297, Issue , 1993, Pages 619-624
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`Fast' and `slow' metastable defects in a-Si:H
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL DEFECTS;
DEGRADATION;
ELECTRON TRANSPORT PROPERTIES;
HYDROGENATION;
LIGHT;
MATHEMATICAL MODELS;
ORDER DISORDER TRANSITIONS;
REACTION KINETICS;
SEMICONDUCTING SILICON;
DEFECT GENERATION;
HYDROGENATED AMORPHOUS SILICON;
LIGHT SOAKING EXPERIMENT;
METASTABLE DEFECTS;
AMORPHOUS MATERIALS;
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EID: 0027873907
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-297-619 Document Type: Conference Paper |
Times cited : (6)
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References (14)
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