Numerical analysis of single event burnout of power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1872-1879

  Kuboyama, Satoshi ^a   Matsuda, Sumio ^a   Nakajima, Masato ^a   Kanno, Tooru ^a   Ishii, Takayuki ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b RYOEI Technica Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CODES (SYMBOLS); ELECTRIC CURRENTS; FAILURE ANALYSIS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; SEMICONDUCTOR JUNCTIONS; SIMULATORS;

AVALANCHE MULTIPLICATION; CURRENT FLOW; ENERGETIC PARTICLE INDUCED CHARGE SPECTROSCOPY; NUMERICAL DEVICE SIMULATOR CODE; POWER MOSFETS; PULSE HEIGHT ANALYZER; REGENERATIVE FEEDBACK MECHANISM; SINGLE EVENT BURNOUT;

MOSFET DEVICES;

EID: 0027867154     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273467     Document Type: Article

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