SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 22, Issue 12, 1993, Pages 1395-1399

Anomalies in annealed LT-GaAs samples

(4) Liliental Weber, Z a Yu, K M a Washburn, J a Look, D C b

a UNIVERSITY OF CALIFORNIA (United States)

b WRIGHT STATE UNIVERSITY (United States)

Author keywords

Low temperature grown GaAs; MBE; precipitation; TEM

Indexed keywords

ANNEALING; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; HALL EFFECT; MOLECULAR BEAM EPITAXY; PRECIPITATION (CHEMICAL); THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ION CHANNELING; LOW TEMPERATURE MOLECULAR BEAM EPITAXY; X RAY ROCKING CURVES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0027866957 PISSN: 03615235 EISSN: 1543186X Source Type: Journal
DOI: 10.1007/BF02649984 Document Type: Article

Times cited : (14)

References (16)

1
- 0023965427
- (1988) IEEE Electron Dev. Lett. EDL , vol.9 , pp. 77
- Smith, F.W.¹ Calawa, A.R.² Chen, C.L.³ Manfra, M.J.⁴ Mahoney, L.J.⁵

2
- 21544435337
- (1991) Appl. Phys. Lett. , vol.59 , pp. 3276
- Gupta, S.¹ Frankel, M.Y.² Valdmanis, J.A.³ Whitaker, J.F.⁴ Mourou, G.A.⁵ Smith, F.W.⁶ Calawa, A.R.⁷

3
- 0042108029
- (1991) Appl. Phys. Lett. , vol.58 , pp. 2153
- Liliental-Weber, Z.¹ Swider, W.² Yu, K.M.³ Kortright, J.⁴ Smith, F.W.⁵ Calawa, A.R.⁶

4
- 84935638105
- Z. Liliental-Weber, T. Kaneyama, T. Terauchi and M. Tanaka, J. Cryst. Growth 1993, in print.

5
- 0007619911
- E.M., Anastasskis, J.D., Joannopoulos, World Scientific, Singapore
- (1990) The Physics of Semiconductors , pp. 473
- Kaminska, M.¹ Weber, E.R.²

6
- 0001580740
- (1990) Phys. Rev. B , vol.42 , pp. 3578
- Look, D.C.¹ Walters, D.C.² Manasreh, M.O.³ Sizelove, J.R.⁴ Stutz, C.E.⁵ Evans, K.R.⁶

7
- 3643104632
- (1990) MRS Proc. , vol.198 , pp. 371
- Liliental-Weber, Z.¹

8
- 84935630278
- (1991) Appl. Phys. A , vol.53 , pp. 142
- Liliental-Weber, Z.¹ Claverie, A.² Washburn, J.³ Smith, F.W.⁴ Calawa, A.R.⁵

9
- 0001155241
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1531
- Melloch, M.R.¹ Otsuka, N.² Woodall, J.M.³ Freeouf, J.L.⁴ Warren, A.C.⁵

10
- 84953612032
- Structure and orientation of As precipitates in GaAs grown at low temperature by molecular beam epitaxy
- (1992) Philosophical Magazine A , vol.65 , pp. 981
- Claverie, A.¹ Liliental-Weber, Z.²

11
- 84935649348
- Z. Liliental-Weber, A. Claverie, P. Werner, W. Schaff and E.R. Weber Mat. Science Forum—Defects in Semiconductors, eds. G. Davies, G.G. DeLeo and M. Stavola, (Trans Tech Pub.) vol. 83–87, (1992), p.1045.

12
- 84935619035
- D.C. Look, D.C. Walters, G.D. Robinson, J.R. Sizelove, M.G. Mier and C.E. Stutz, J. Appl. Phys. (1993) in press.

13
- 3743061367
- (1991) Appl. Phys. Lett. , vol.59 , pp. 3267
- Yu, K.M.¹ Liliental-Weber, Z.²

14
- 0001412270
- (1992) J. Appl. Phys. , vol.72 , pp. 2850
- Yu, K.M.¹ Kaminska, M.² Liliental-Weber, Z.³

15
- 0039708304
- (1990) Mat. Res. Soc. Symp. Proc. , vol.208 , pp. 183
- Liliental-Weber, Z.¹ Ishikawa, A.² Terauchi, M.³ Tanaka, M.⁴

16
- 0000402357
- (1992) Phys. Rev. B , vol.46 , pp. 9400
- Chadi, D.J.¹

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