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Volumn , Issue , 1993, Pages 701-704

ULSI Technology Development by Predictive Simulation

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR MODEL; MOS-FET; NOVEL DEVICES; NUMERICAL ALGORITHMS; PARASITICS; PERFORMANCE; PREDICTIVE SIMULATIONS; SEMICONDUCTOR DEVICE SIMULATION; SEMICONDUCTOR PROCESS SIMULATION; TECHNOLOGY DEVELOPMENT;

EID: 0027858125     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (14)

References (15)
  • 1
    • 34047164707 scopus 로고
    • Three-dimensional characterization of bipolar transistors in a submicron BiCMOS technology using integrated process and device simulation
    • M. R. Pinto, et.al., "Three-dimensional characterization of bipolar transistors in a submicron BiCMOS technology using integrated process and device simulation," IEDM Tech. Dig., pp.923-926,1992.
    • (1992) IEDM Tech. Dig. , pp. 923-926
    • Pinto, M.R.1
  • 2
    • 0002371631 scopus 로고
    • Simulation of ULSI device effects
    • M. R. Pinto, "Simulation of ULSI device effects," Ehctrochem. Soc. Proc, vol.91-11,pp.43-51,1991.
    • (1991) Ehctrochem. Soc. Proc , vol.91-11 , pp. 43-51
    • Pinto, M.R.1
  • 3
    • 85126795597 scopus 로고    scopus 로고
    • B.-G. Park, et.al. to appear
    • B.-G. Park, et.al. (to appear).
  • 4
    • 85126742273 scopus 로고
    • Explanation of reverse short channel effect by defect gradient
    • C. S. Rafferty, et.al., "Explanation of reverse short channel effect by defect gradient," IEDM Tech. Dig., 1993.
    • (1993) IEDM Tech. Dig.
    • Rafferty, C.S.1
  • 5
    • 0027640789 scopus 로고
    • Silicon MOS transconductance scaling into the overshoot regime
    • M. R. Pinto, et.al., "Silicon MOS transconductance scaling into the overshoot regime," IEEE Electr. Dev. Lett., vol.14, pp.375-378,1993.
    • (1993) IEEE Electr. Dev. Lett. , vol.14 , pp. 375-378
    • Pinto, M.R.1
  • 8
    • 84910906165 scopus 로고
    • New mechanism for bipolar degradation in submicron BiCMOS
    • J. Bude, I. C. Kizilyalli, "New mechanism for bipolar degradation in submicron BiCMOS," Proc. Symp. VLSI Tech., pp.79-80, 1993.
    • (1993) Proc. Symp. VLSI Tech. , pp. 79-80
    • Bude, J.1    Kizilyalli, I.C.2
  • 9
    • 0026238746 scopus 로고
    • Adaptive grid generation for VLSI device simulation
    • W. M. Coughran, Jr., et.al., "Adaptive grid generation for VLSI device simulation," IEEE Trans. CAD of ICs, vol.10, pp.1259-1275,1991.
    • (1991) IEEE Trans. CAD of ICs , vol.10 , pp. 1259-1275
    • Coughran, W.M.1
  • 10
    • 0024662409 scopus 로고
    • A new discretization scheme for the semiconductor current continuity equations
    • J. Burgler, et.al., "A new discretization scheme for the semiconductor current continuity equations," IEEE Trans. CAD of ICs, vol.8, pp.479-489,1989.
    • (1989) IEEE Trans. CAD of ICs , vol.8 , pp. 479-489
    • Burgler, J.1
  • 11
    • 0021640217 scopus 로고
    • Computer-AIDS for analysis and scaling of extrinsic devices
    • M. R. Pinto, et.al., "Computer-aids for analysis and scaling of extrinsic devices," IEDM Tech. Dig., pp.288-291,1984.
    • (1984) IEDM Tech. Dig. , pp. 288-291
    • Pinto, M.R.1
  • 12
    • 0026169335 scopus 로고
    • Impact of the vertical SOI DELTA structure on planar device technology
    • D. Hisamoto, et.al., "Impact of the vertical SOI DELTA structure on planar device technology," IEEE Trans. Electr. Dev., vol.34, pp.1419-1424,1991.
    • (1991) IEEE Trans. Electr. Dev. , vol.34 , pp. 1419-1424
    • Hisamoto, D.1
  • 13
    • 85126800993 scopus 로고    scopus 로고
    • M. N. Darwish, et.al. to appear
    • M. N. Darwish, et.al. (to appear).
  • 14
    • 85126804062 scopus 로고
    • Technology CAD at AT&T
    • P. Lloyd, et.al., "Technology CAD at AT&T," Proc. SISDEP, 1993.
    • (1993) Proc. SISDEP
    • Lloyd, P.1
  • 15
    • 84977294984 scopus 로고
    • The CENTER design optimization system
    • K. Singhal, et.al., "The CENTER design optimization system," AT&T Tech. J., vol.68, pp.77-92, 1989.
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    • Singhal, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.