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1
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0001671884
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Rate Prediction for Single Event Effects - A Critique
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December
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E.L. Petersen, J.C. Pickel, J.H. Adams, Jr. and E.C. Smith, “Rate Prediction for Single Event Effects - A Critique,” IEEE Trans. Nucl. Sci. 39, pp. 1577–1599, December 1992.
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Petersen, E.L.1
Pickel, J.C.2
Adams, J.H.3
Smith, E.C.4
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3
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84939361680
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Analytical Correlation Between Observed Non-Ideal SEU Cross Section Data and Process Parameter Distributions
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this issue
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L.W. Massengill, M.L. Alles, S.E. Kerns and K. Jones, “Analytical Correlation Between Observed Non-Ideal SEU Cross Section Data and Process Parameter Distributions,” IEEE Trans. Nucl. Sci., this issue.
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IEEE Trans. Nucl. Sci
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Massengill, L.W.1
Alles, M.L.2
Kerns, S.E.3
Jones, K.4
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4
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0024942859
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Depletion Region Geometry Analysis Applied to Single Event Sensitivity
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December
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J.B. Langworthy, “Depletion Region Geometry Analysis Applied to Single Event Sensitivity,” IEEE Trans. Nucl. Sci. 36, pp. 2427–2434, December 1989.
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IEEE Trans. Nucl. Sci
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Langworthy, J.B.1
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5
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0024902710
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SEU Characterization of a Hardened CMOS 64K and 256K SRAM
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December
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F.W. Sexton, J.S. Fu, R.A. Kohler and R. Koga, “SEU Characterization of a Hardened CMOS 64K and 256K SRAM,” IEEE Trans. Nucl. Sci. 36, pp. 2311–2317, December 1989.
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IEEE Trans. Nucl. Sci
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Sexton, F.W.1
Fu, J.S.2
Kohler, R.A.3
Koga, R.4
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6
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84939379565
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Heavy Ion and Proton Analysis of a GaAs C-HIGFET SRAM
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this issue
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J.H. Cutchin, P.W. Marshall, T.R. Weatherford, J.B. Langworthy, E.L. Petersen, A.B. Campbell, S. Hanka and A. Peczalski, “Heavy Ion and Proton Analysis of a GaAs C-HIGFET SRAM,” IEEE Trans. Nucl. Sci., this issue.
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IEEE Trans. Nucl. Sci
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Cutchin, J.H.1
Marshall, P.W.2
Weatherford, T.R.3
Langworthy, J.B.4
Petersen, E.L.5
Campbell, A.B.6
Hanka, S.7
Peczalski, A.8
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7
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84937079881
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Heavy Ion Test Results on Memories
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R. Ecoffet, M Labrunee, S. Duzellier and D. Falguere, “Heavy Ion Test Results on Memories,” IEEE Radiation Effects Data Workshop, pp. 27–33, 1992.
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(1992)
IEEE Radiation Effects Data Workshop
, pp. 27-33
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Ecoffet, R.1
Labrunee, M.2
Duzellier, S.3
Falguere, D.4
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8
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0000883655
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Applicability of LET to Single Events in Microelectronic Structures
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December
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M.A. Xapsos, “Applicability of LET to Single Events in Microelectronic Structures,” IEEE Trans. Nucl. Sci. 39, pp. 1613–1621, December 1992.
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IEEE Trans. Nucl. Sci
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Xapsos, M.A.1
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9
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84939760518
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Heavy Ion Induced Single Event Phenomena (SEP) Data for Semiconductor Devices from Engineering Testing
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July
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D.K. Nichols, M.A. Huebner, W.E. Price, L.S. Smith and J.R. Coss, “Heavy Ion Induced Single Event Phenomena (SEP) Data for Semiconductor Devices from Engineering Testing,” Jet Propulsion Laboratory Publication 88–17, July 1988.
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Jet Propulsion Laboratory Publication 88–17
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Nichols, D.K.1
Huebner, M.A.2
Price, W.E.3
Smith, L.S.4
Coss, J.R.5
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10
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0020248627
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Single Event Upset Vulnerability of Selected 4K and 16K CMOS Static RAMs
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December
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W.A. Kolasinski, R. Koga, J.B. Blake, G. Brucker, P. Pandya, E. Petersen and W. Price, “Single Event Upset Vulnerability of Selected 4K and 16K CMOS Static RAMs,” IEEE Trans. Nucl. Sci. 29, December 1982.
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IEEE Trans. Nucl. Sci
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Kolasinski, W.A.1
Koga, R.2
Blake, J.B.3
Brucker, G.4
Pandya, P.5
Petersen, E.6
Price, W.7
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11
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0019243357
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Simulation of Cosmic Ray-Induced Soft Errors in CMOS/SOS Memories
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December
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G.J. Brucker, W. Chater and W.A. Kolasinski, “Simulation of Cosmic Ray-Induced Soft Errors in CMOS/SOS Memories,” IEEE Trans. Nucl. Sci. 27, pp. 1490–1493, December 1980.
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IEEE Trans. Nucl. Sci
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Brucker, G.J.1
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