Lateral grain growth of poly-si films with a specific orientation by an excimer laser annealing method

Japanese Journal of Applied Physics

Volumn 32, Issue 12 S, 1993, Pages 6190-6195

  Kuriyama, Hiroyuki ^a,b   Nohda, Tomoyuki ^a   Ishida, Satoshi ^a   Kuwahara, Takashi ^a   Noguchi, Shigeru ^a   Klyama, Seiichi ^a,b   Tsuda, Shinya ^a   Nakano, Shoichi ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

^b Giant Electronics Technology Co Ltd ^*  (Japan)

Author keywords

Anisotropy; Crystallographic orientation; Excimer laser annealing; Grain size; Lateral grain growth; Poly Si; Surface free energy

Indexed keywords

ANISOTROPY; ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EXCIMER LASERS; GLASS; GRAIN GROWTH; GRAIN SIZE AND SHAPE; INTERFACIAL ENERGY; MORPHOLOGY; SEMICONDUCTING SILICON; SUBSTRATES;

EXCIMER LASER ANNEALING; GLASS SUBSTRATES; LATERAL GRAIN GROWTH; POLYSILICON FILMS; SURFACE FREE ENERGY;

AMORPHOUS FILMS;

EID: 0027848456     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.6190     Document Type: Article

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