Polycrystalline Silicon Thin-Film Transistors with Two-Step Annealing Process

IEEE Electron Device Letters

Volumn 14, Issue 12, 1993, Pages 551-553

  Bonnel, M ^a   Duhamel, N ^a   Loisel, B ^a   Haji, L ^b   Stoemenos, J ^c  

^a ORANGE LABS   (France)

^b Groupe de microelectronique et visualisation ^*  (France)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION SENSITIVE FIELD EFFECT TRANSISTORS; LIQUID CRYSTAL DISPLAYS; SEMICONDUCTOR DIODES;

BARRIER HEIGHT REDUCTION; CHEMICAL VAPOR DEPOSITION; DEFECT REDUCTION; SOLID PHASE CRYSTALLIZATION;

SEMICONDUCTOR DEVICES;

EID: 0027847628     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.260786     Document Type: Article

References (9)

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