InAlAs/InGaAs HBT X-band double-balanced upconverter

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1993, Pages 219-222

  Kobayashi, K W ^a   Tran, L T ^a   Bui, S ^a   Oki, A K ^a   Velebir, J R ^a   Streit, D C ^a   Rosen, M ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; FREQUENCY CONVERTERS; INTEGRATED CIRCUIT LAYOUT; PERFORMANCE; RADIO FREQUENCY AMPLIFIERS; SCHEMATIC DIAGRAMS; SEMICONDUCTING INDIUM COMPOUNDS; SIGNAL DISTORTION;

CONVERSION GAIN; CONVERSION LOSS; DOUBLE BALANCED UPCONVERTER; GILBERT CELL MIXER; RADIO FREQUENCY BANDWIDTH; UPCONVERTER ARCHITECTURE;

MIXER CIRCUITS;

EID: 0027846571     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)