Power HEMT production process for high-efficiency Ka-band MMIC power amplifiers

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1993, Pages 341-344

  Biedenbender, M D ^a   Lee, J L ^a   Tan, K L ^a   Liu, P H ^a   Freudenthal, A ^a   Streit, D C ^a   Luong, G ^a   Lai, R ^a   Aust, M V ^a   Allen, B ^a   Lin, T S ^a   Yen, H C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; PERFORMANCE; POWER AMPLIFIERS; PROCESS CONTROL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; WSI CIRCUITS;

KA-BAND MMIC POWER AMPLIFIERS; MICROWAVE MONOLITHIC INTEGRATED CIRCUITS; POWER HEMT PRODUCTION PROCESS; STATE OF THE ART; WAFERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0027845983     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)