Degradation-Free Ta2O5 Capacitor after BPSG Reflow at 850°C for High Density DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 53-56

  Kwon, K W ^a   Park, S O ^a   Kang, C S ^a   Kim, Y N ^a   Ahn, S T ^a   Lee, M Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; LEAKAGE CURRENTS; TANTALUM OXIDES; TITANIUM NITRIDE; DEGRADATION; OXIDATION; RANDOM ACCESS STORAGE; TANTALUM COMPOUNDS;

CURRENT CHARACTERISTIC; CURRENT LEVELS; LOW-LEAKAGE CURRENT; THERMAL DEGRADATION';

DETERIORATION; CAPACITORS;

DYNAMIC RANDOM ACCESS; MEMORIES (DRAMS); REFLOW; TANTALUM PENTAOXIDE;

EID: 0027839369     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. S. Kamiyama, T. Saeki, H. Mori and Y. Numasawa, IEDM Tech. Dig., 1991, p.827.
2. H.S. Park, Y.K. Baik, J.C. Kim, S.H. Choi, and K.H. Oh, Extended Abstract of the 1992 International Conference on SSDM, p.524.
3. H. Shinriki and M. Nakata, IEEE Trans. Electron Devices, ED-38,No.3,p.455,1991.
4. Y. Nishioka, et al., IEEE Trans. Electron Devices, ED-34, No.9, p.1957, 1987.
5. H. Suzuki, S. Kamiyama, H. Watanabe, A. Sakai, and A.I shitani, Extended Abstract of the 1993 International Conference on SSDM, p.862.
6. H. Matsuhashi, S. Nishikawa, Extended Abstract of the 1993 International Conference on SSDM, p. 853.