15-ps ECL/74-GHz Ft Si Bipolar Technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 67-70

  Uchino, Takashi ^a   Shiba, Takeo ^a   Kikuchi, Toshiyuki ^a   Tamaki, Yoichi ^a   Watanabe, Atsuo ^a   Kiyota, Yukihiro ^a   Honda, Mitsuharu ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON WAFERS; WAFER BONDING; DOPING (ADDITIVES); GATES (TRANSISTOR); ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY;

BIPOLAR TECHNOLOGY; DOPED POLYSILICON; EMITTER RESISTANCE; LOWER ENERGIES; PERFORMANCE; PHOSPHORUS-DOPED; POLYSILICON EMITTER; THERMAL BUDGET; THERMAL EMITTER; VAPOR PHASE DOPING;

BUDGET CONTROL; BIPOLAR TRANSISTORS;

DOUBLE POLYSILICON; EMITTER RESISTANCE; RAPID VAPOR PHASE DOPING (RVD);

EID: 0027814755     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J. D. Cressler et al., IEEE EDL-13, p. 262 (1992).
2. S. Nakamura et al., EDM Tech. Digest, p. 445 (1992).
3. S. Matsuda et al., 1993 Sym. VLSI Tech. Digest, p. 73 (1993).
4. M. Nanba et al., IEDM Tech. Digest, p. 443 (1991).
5. Y. Kiyota et al., IEEE Trans. ED-39, p. 2077 (1992).
6. J. N. Burghartz et al., IEEE EDL-12, p. 679 (1991).