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Volumn 41, Issue 12, 1993, Pages 2288-2294

A W-Band Integrated Power Module Using MMIC MESFET Power Amplifiers and Varactor Doublers

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY MULTIPLYING CIRCUITS; GAIN MEASUREMENT; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MESFET DEVICES; MICROWAVE DEVICES; PERFORMANCE; POWER AMPLIFIERS; VARACTORS;

EID: 0027814351     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.260719     Document Type: Article
Times cited : (5)

References (13)
  • 1
    • 0025516795 scopus 로고
    • A narrow-channel 0.2 μm gate-length: Double quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies
    • Nov.
    • G. Metze, T. Lee, J. Bass, P. Laux, H. Carlson, and A. Cornfield, “A narrow-channel 0.2 μm gate-length: Double quantum-well pseudomorphic MODFET with high power gain at millimeter-wave frequencies.” IEEE Electron Device Lett., vol. 11, pp. 493–495, Nov. 1990.
    • (1990) IEEE Electron Device Lett. , vol.11 , pp. 493-495
    • Metze, G.1    Lee, T.2    Bass, J.3    Laux, P.4    Carlson, H.5    Cornfield, A.6
  • 7
    • 21244491585 scopus 로고
    • High performance quasi-planar varactors for millimeter waves
    • Oct.
    • J. A. Calviello, J. L. Wallace, and P. R. Bie, “High performance quasi-planar varactors for millimeter waves,” IEEE Trans. Electron Devices, vol. ED-21, pp. 624–630, Oct. 1974.
    • (1974) IEEE Trans. Electron Devices , vol.ED-21 , pp. 624-630
    • Calviello, J.A.1    Wallace, J.L.2    Bie, P.R.3
  • 8
    • 0018515326 scopus 로고
    • Advanced devices and components for the millimeter and submillimeter systems
    • Sept.
    • J. A. Calviello, “Advanced devices and components for the millimeter and submillimeter systems.” IEEE Trans. Electron Devices, vol. ED-26, pp. 1273–1281, Sept. 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1273-1281
    • Calviello, J.A.1
  • 10
    • 66149182315 scopus 로고
    • Prediction of power and efficiency of frequency doublers using varactors exhibiting general nonlinearity
    • Aug.
    • T. C. Leonard, “Prediction of power and efficiency of frequency doublers using varactors exhibiting general nonlinearity.” Proc. IEEE, pp. 1135–1139. Aug. 1963.
    • (1963) Proc. IEEE , pp. 1135-1139
    • Leonard, T.C.1
  • 12
    • 0019634520 scopus 로고
    • Analysis of Schottky barrier millirnetric varactor doublers
    • Nov.
    • E. Bava, G. Paolo, A. Godone, and G. Rietto, “Analysis of Schottky barrier millirnetric varactor doublers,” IEEE Trans. Microwave Theory Techniques, vol. MTT-29, pp. 1145–1149, Nov. 1981.
    • (1981) IEEE Trans. Microwave Theory Techniques , vol.MTT-29 , pp. 1145-1149
    • Bava, E.1    Paolo, G.2    Godone, A.3    Rietto, G.4
  • 13
    • 0025750607 scopus 로고
    • IT-band monolithic frequency doubler using vertical GaAs varactor diodes with n n’ buried layer
    • Jan.
    • G. Hegazi, A. Ezzeddine, F. Phelleps, P. McNally, and K. Pande, “IT-band monolithic frequency doubler using vertical GaAs varactor diodes with n n’ buried layer.” IEE Electronics Lett., vol. 27. pp. 213–214. Jan. 1991.
    • (1991) IEE Electronics Lett. , vol.27 , pp. 213-214
    • Hegazi, G.1    Ezzeddine, A.2    Phelleps, F.3    McNally, P.4    Pande, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.