High gain V-band heterojunction FET MMIC power amplifiers

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1993, Pages 379-382

  Funabashi, M ^a   Hosoya, K ^a   Ohata, K ^a   Onda, K ^a   Iwata, N ^a   Kuzuhara, M ^a  

^a General Technology Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GAIN MEASUREMENT; GATES (TRANSISTOR); HETEROJUNCTIONS; IMPEDANCE MATCHING (ACOUSTIC); LEAKAGE CURRENTS; MICROWAVE DEVICES; MONOLITHIC INTEGRATED CIRCUITS; OPTIMIZATION; PRODUCT DESIGN;

GATE BREAKDOWN VOLTAGE; MICROWAVE MONOLITHIC INTEGRATED CIRCUITS; OUTPUT POWER; POWER ADDED EFFICIENCY; SIGNAL GAIN;

POWER AMPLIFIERS;

EID: 0027802205     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)