PREDICT 1.6: Modeling of Metal Silicide Processes

Journal of the Electrochemical Society

Volumn 140, Issue 12, 1993, Pages 3660-3667

  Osburn, C M ^a   Tsai, J Y ^a   Wang, Q F ^a   Rose, J ^b   Cowen, A ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b MCNC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); INTERFACES (MATERIALS); ION IMPLANTATION; MOSFET DEVICES; SPECTROSCOPY;

AGGLOMERATION; DOPANT REDISTRIBUTION; METAL SILICIDE PROCESSES;

MATHEMATICAL MODELS;

EID: 0027766624     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2221146     Document Type: Article

References (27)

1. S. Zirinsky and B. L. Crowder, Journal of the Electrochemical Society, 124, 463 (1977).
2. S. P. Murarka, IEDM Tech. Dig., 454 (1979).
3. T. Shibata, K. Hieda, M. Sato, M. Konaka, R. L. M. Dang, and H. Iizuka, IEDM Tech. Dig., 647 (1981).
4. C. M. Osburn, M. Y. Tsai, S. Roberts, C. J. Lucchese, and C. Y. Ting, in VLSI Science and Technology/1982, C. J. Dell'Oca and W. M. Bullis, Editors, PV 82–7, p. 213, The Electrochemical Society Proceedings Series, Pennington, NJ (1982).
5. R. C. K. Lau, Y. C. See, D. B. Scott, J. M. Bridges, S. M. Perna, and R. D. Davies, IEDM Tech. Dig., 714 (1982).
6. F. Runovc, H. Norstrom, R. Buchta, P. Woklund, and S. Petersson, Physica Scripta, 26, 108 (1982).
7. J. Amano, P. Merchant, T. R. Cass, J. N. Miller, and T. Koch, J. Appl Phys., 59, 2689 (1986).
8. C. M. Osburn, T. Brat, D. Sharma, N. Parikh, W.-K. Chu, D. Griffis, S. Corcoran, and S. Lin, in ULSI Science and Technology/1987, S. Broydo and C. M. Osburn, Editors, PV 87–11, p. 402, The Electrochemical Society Proceedings Series, Pennington, NJ (1987); Journal of the Electrochemical Society, 135, 1900 (1988).
9. N. Yu, Z. Zhou, W. Zhou, S. Tsou, and D. Zhu, Nucl. Instrum. Methods Phys. Res., B19-20, 427 (1987).
10. P. L. Smith, C. M. Osburn, D. S. Wen, and G. McGuire, MRS Symp. Proc., 160, 299 (1990).
11. S. Batra, K. Park, S. Yoganathan, J. Lee, S. Banerjee, S. Sun, and G. Lux, IEEE Trans. Electron Devices, ED-37, 2322 (1990).
12. C. Y. Lu and J. M. Sung, IEEE Electron Device Lett., EDL-10, 446 (1989).
13. C. M. Osburn, Q.-F. Wang, M. Kellam, C. Canovai, P. L. Smith, G. E. McGuire, Z. G. Xiao, and G. A. Rozgonyi, Appl. Surf. Sci., 53, 291 (1991).
14. R. B. Fair, PREDICT: Process Estimator for the Design of Integrated Circuit Technologies, Microelectronics Center of North Carolina, Research Triangle Park, NC (1986).
15. H. Jiang, C. M. Osburn, Z.-G. Xiao, G. McGuire, and G. A. Rozgonyi, Journal of the Electrochemical Society, 139, 211 (1992).
16. C. Y. Ting, F. M. D’Heurle, S. S. Iyer, and P. M. Fryer, Journal of the Electrochemical Society, 133, 2621 (1986).
17. R. K. Shukla and J. S. Multani, in Proceedings of Fourth International IEEE Multilevel Metallurgy Conference, p. 470, IEEE (1987).
18. S. Vaidya, S. P. Murarka, and T. T. Sheng, J. Appl. Phys., 58, 971 (1985).
19. H. Jiang, C. M. Osburn, P. Smith, Z.-G. Xiao, G. D. Griffis, G. McGuire, and G. A. Rozgonyi, Journal of the Electrochemical Society, 139, 196 (1992).
20. J. P. Biersack and I. G. Haggmark, Nucl. Instrum. Methods, 174, 257 (1980).
21. Q. F. Wang, C. M. Osburn, P. L. Smith, C. A. Canovai, and G. E. McGuire, Journal of the Electrochemical Society, 140, 200 (1993).
22. H. Jiang, C. M. Osburn, Z.-G. Xiao, G. McGuire, G. A. Rozgonyi, B. Patnaik, N. Parikh, and M. Swanson, Journal of the Electrochemical Society, 139, 206 (1992).
23. A. Armigliato, D. Nobili, P. Ostoja, M. Servidori, and S. Solimi, in Semiconductor Silicon 1977, H. R. Huff and E. Sirtl, Editors, PV 77–2, p. 638, The Electrochemical Society Proceedings Series, Princeton, NJ (1977).
24. D. Nobili, in Aggregation Phenomena of Point Defects in Silicon, E. Sirtl and J. Goorissen, Editors, PV 83–4, p. 189, The Electrochemical Society Proceedings Series, Pennington, NJ (1983).
25. J. Y. Tsai, Q. F. Wang, C. M. Osburn, C. A. Canovai, J. Rose, A. Cowen, and M. Denkar, in Proceedings of Second International Workshop of the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park, NC, March 23–25, 1993; To be published in J. Vac. Sci. Technol.
26. C. A. Canovai, M.S. Thesis, North Carolina State University, Raleigh, NC (1991).
27. J. Y. Tsai, Q. F. Wang, C. M. Osburn, C. A. Canovai, J. Rose, A. Cowen, and M. Denkar, Manuscript in preparation.