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Volumn 22, Issue 1, 1993, Pages 61-67
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Optoelectronic applications of LTMBE III-V materials
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
FILMS;
LOW TEMPERATURE EFFECTS;
MOLECULAR BEAM EPITAXY;
OPTOELECTRONIC DEVICES;
CARRIER LIFETIME;
DIELECTRIC BREAKDOWN;
MOBILITY;
PHOTOCONDUCTIVE DETECTORS;
PHOTODETECTORS;
TERNARY COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0027726676
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/0921-5107(93)90224-B Document Type: Article |
Times cited : (72)
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References (31)
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