Growth and characterization of strain compensated Si1-x-y epitaxial layers

Materials Letters

Volumn 18, Issue 1-2, 1993, Pages 57-60

  Regolini, J L ^a   Gisbert, F ^b   Dolino, G ^c   Boucaud, P ^d  

^a ORANGE LABS   (France)

^b CEA GRENOBLE   (France)

^c Laboratoire de Spectrométrie Physique URA 0008 CNRS ^*  (France)

^d UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING FILMS; STRAIN; X RAY ANALYSIS;

EPITAXIAL LAYERS; TERNARY ALLOYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0027702667     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-577X(93)90056-4     Document Type: Article

References (6)

1. Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures
2. X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates