Application of indium-tin-oxide with improved transmittance at 1.3 μm for MSM photodetectors

IEEE Photonics Technology Letters

Volumn 5, Issue 11, 1993, Pages 1313-1315

  Seo, Jong Wook ^a   Adesida, Ilesanmi ^a   Caneau, Catherine ^b   Bhat, Rajaram ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHARGE CARRIERS; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; LIGHT TRANSMISSION; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS;

IMPROVED TRANSMITTANCE; INDIUM TIN OXIDES; METAL SEMICONDUCTOR METAL PHOTODIODES;

PHOTODETECTORS;

EID: 0027701376     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.250054     Document Type: Article

References (9)

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