A New Technique for Depth Resolved Carrier Recombination Measurements Applied to Proton Irradiated Thyristors

IEEE Transactions on Electron Devices

Volumn 40, Issue 11, 1993, Pages 2065-2073

  Linnros, Jan ^a   Norlin, Peter ^a   Hallén, Anders ^b  

^a Swed Institute of Microelectronics   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; INFRARED RADIATION; LASER BEAM EFFECTS; LASER PULSES; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; THYRISTORS;

DEPTH RESOLVED CARRIER RECOMBINATION MEASUREMENTS; LIFETIME MEASUREMENTS; MONTE CARLO SIMULATED ION DAMAGE PROFILES; PROTON IRRADIATED THYRISTORS;

CHARGE CARRIERS;

EID: 0027700937     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.239750     Document Type: Article

References (16)

1. D. Silber, W.-D. Nowak, W. Wondrak, B. Thomas, and H. Berg, “Improved dynamic properties of GTO-thyristors and diodes by proton implantation,” IEDM Techn. Digest, p. 162, 1985.
2. A. Hallén and M. Bakowski, “Combined proton and electron irradiation for improved GTO thyristors,” Solid State Electron., vol. 32, p. 1033, 1989.
3. W. Wondrak and A. Boos, “Helium implantation for lifetime control in silicon power devices,” ESSDERC 1987, Bologna, Proc., p. 649, 1987.
4. A. Hallén, B. U. R. Sundqvist, Z. Paska, B. G. Svensson, M. Rosling, and J. Tirén, “Deep level transient spectroscopy analysis of fast ion tracks in silicon,” J. Appl. Phys., vol. 67, p. 1266, 1990.
5. For a review see: D. K. Schroder, Semiconductor material and device characterization New York: Wiley, 1990, p. 359.
6. T. Flohr and R. Helbig, “Determination of the spatial variation of the carrier lifetime in a proton-irradiated Si n+-n-p+ diode by optical-beam-induced current measurements,” IEEE Trans. Electron Devices, vol. ED-37, p. 2076, 1990.
7. G. Bohnert, R. Häcker, and A. Hangleiter, “Position resolved carrier lifetime measurements in silicon power devices by time resolved photoluminescence spectroscopy,” J. Physique, vol. 49-C4, p. 617, 1988.
8. J. P. Biersack and L. J. Haggmark, “The transport of ions through matter,” Nucl. Instrum. Methods, vol. 174, p. 257, 1980.
9. J. Linnros, P. Norlin, and A. Hallén, “Depth resolved carrier lifetime measurements of proton irradiated thyristors,” IEDM Techn. Dig., p. 157, 1991.
10. J. Waldmeyer, “A contactless method for determination of carrier lifetime, surface recombination velocity and diffusion constant in semiconductors,” J. Appl. Phys., vol. 63, p. 1977, 1988.
11. V. Grivickas, J. Linnros, A. Vigelis, J. Seckus, and J. A. Tellefsen, “A study of carrier lifetime in silicon by laser induced absorption: A perpendicular geometry measurement,” Solid State Electron., vol. 35, p. 299, 1992.
12. B. G. Svensson and A. Hallén, “Hydrogen related electron traps in proton bombarded float zone Si,” Mat. Sci. Eng., vol. B4, p. 285, 1989.
13. M. W. Hüppi, “Proton irradiation of silicon: Complete electrical characterization of the induced recombination centers,” J. Appl. Phys., vol. 68, p. 2702, 1990.
14. A. Mogro-Campero and R. P. Love, “Carrier lifetime reduction in silicon by proton implantation through MOS structures,” J. Electrochem. chem. Soc., vol. 131, p. 2679, 1984.
15. A. O. Evwaraye and E. Sun, “Electron-irradiation-induced divacancy in lightly doped silicon,” J. Appl. Phys., vol. 47, p. 3776, 1976.
16. A. O. Evwaraye and B. J. Baliga, “The dominant recombination centers in electron-irradiated semiconductor devices,” J. Electrochem. Soc., vol. 124, p. 913, 1977.