A Novel MONOS Nonvolatile Memory Device Ensuring 10-Year Data Retention after 107 Erase/Write Cycles

IEEE Transactions on Electron Devices

Volumn 40, Issue 11, 1993, Pages 2011-2017

  Minami, Shin ichi ^a   Kamigaki, Yoshiaki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; DATA RECORDING; DEGRADATION; DENSIFICATION; ELECTRON TUNNELING; NONVOLATILE STORAGE; ROM; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

10 YEAR DATA RETENTION; ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORIES; METAL NITRIDE OXIDE SEMICONDUCTOR; METAL OXIDE NITRIDE OXIDE SEMICONDUCTOR; MONOS NONVOLATILE MEMORY DEVICE;

MOS DEVICES;

EID: 0027700936     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.239742     Document Type: Article

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