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Volumn 32, Issue 11 R, 1993, Pages 4907-4911

Crystalline fraction of microcrystalline silicon films prepared by plasma-enhanced chemical vapor deposition using pulsed silane flow

(5) Kanek, Toshiki a Onisaw, Ken Ichi a Wakagi, Masatoshi a Kita, Yoshiaki a Minemura, Tetsuroh a

a HITACHI LTD (Japan)

Author keywords

Crystalline fraction; Microcrystalline Si; Plasma enhanced chemical vapor deposition (PECVD); Pulsed silane flow; Raman scattering

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FILM PREPARATION; GRAIN SIZE AND SHAPE; HYDROGEN; PLASMA APPLICATIONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SILANES;

CRYSTALLINE FRACTION; MICROCRYSTALLINE SILICON FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PULSED SILANE FLOW;

SEMICONDUCTING SILICON;

EID: 0027700486 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.32.4907 Document Type: Article

Times cited : (67)

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