High-mobility GeSi PMOS on SIMOX

IEEE Electron Device Letters

Volumn 14, Issue 11, 1993, Pages 520-522

  Nayak, D K ^a   Woo, J C S ^a   Yabiku, G K ^a   MacWilliams, K P ^a   Park, J S ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRIC FIELDS; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; SIMULATION; SUBSTRATES;

BAND BENDING; CHANNEL MOBILITY; HOLE CONFINEMENT; SILICON INSULATED METAL OXIDE DEVICES; THRESHOLD VOLTAGES;

MOS DEVICES;

EID: 0027699250     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.258002     Document Type: Article

References (14)

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