Quick Response Field Sensor Using 200MHz Amorphous MI Element FET Multivibrator Resonance Oscillator

IEEE Transactions on Magnetics

Volumn 29, Issue 6, 1993, Pages 3177-3179

  Yoshida, Yuzo ^a   Uchiyama, Tsuyoshi ^b   Mohri, Kaneo ^b   Ohga, Suehisa ^c  

^a KITAKYUSHU NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c JFE STEEL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CIRCUIT OSCILLATIONS; CIRCUIT RESONANCE; ELECTRIC WIRE; JUNCTION GATE FIELD EFFECT TRANSISTORS; MAGNETIC FIELDS; MAGNETOELECTRIC EFFECTS; MAGNETOSTRICTIVE DEVICES; MULTIVIBRATORS; OSCILLATORS (ELECTRONIC); SCHEMATIC DIAGRAMS;

MAGNETIC SENSORS; MAGNETO INDUCTIVE EFFECT; MULTIVIBRATOR RESONANCE OSCILLATOR; QUICK RESPONSE FIELD SENSOR;

SENSORS;

EID: 0027699181     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/20.281128     Document Type: Article

References (2)

1. K. Mohri, T. Kohzawa, K. Kawashima, H. Yoshida, and L. V. Panina, “Magneto-inductive effect (MI effect) in amorphous wires,” IEEE Trans. Magn., vol. 29, No. 2, pp. 1245–1248 (1992).
2. Japanese Patent Application No. 24059, (1993).