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Volumn 5, Issue 11, 1993, Pages 1316-1318

High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ENERGY GAP; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0027699126     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.250055     Document Type: Article
Times cited : (88)

References (7)
  • 1
  • 3
    • 0026942891 scopus 로고
    • 0.47As/InP pin/JFET optical receiver front-end with adaptive feedback control
    • 0.47As/InP pin/JFET optical receiver front-end with adaptive feedback control,” IEEE Photon. Technol. Lett., vol. 4, pp. 1244–1246, 1992.
    • (1992) IEEE Photon. Technol. Lett. , vol.4 , pp. 1244-1246
    • Blaser, M.1    Melchior, H.2
  • 6
    • 84944992004 scopus 로고
    • The phototransistor revisited: All-bipolar monolithic photoreceiver at 2 Gb/s with high sensitivity
    • Boston, MA, June
    • S. Chandrasekhar, A. H. Gnauck, R. A. Hamm and G. J. Qua, “The phototransistor revisited: All-bipolar monolithic photoreceiver at 2 Gb/s with high sensitivity,” Tech. Dig. 50th Ann. Dev. Res. Conf., Boston, MA, June 1992.
    • (1992) Tech. Dig. 50th Ann. Dev. Res. Conf.
    • Chandrasekhar, S.1    Gnauck, A.H.2    Hamm, R.A.3    Qua, G.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.