Frequency divider using InAIAs/InGaAs HEMT DCFL-NOR gates

Electronics Letters

Volumn 29, Issue 24, 1993, Pages 2100-2101

  Harada, N ^a   Kuroda, S ^a   Watanabe, Y ^a   Hikosaka, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Frequency dividers; High electron mobility transistors

Indexed keywords

CASCADE CONNECTIONS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT TESTING; ION IMPLANTATION; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

DIVIDE BY FOUR CIRCUIT;

FREQUENCY DIVIDING CIRCUITS;

EID: 0027696288     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931404     Document Type: Article

References (13)

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