20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage

IEEE Photonics Technology Letters

Volumn 5, Issue 11, 1993, Pages 1288-1290

  Devaux, F ^a   Dorgeuille, F ^a   Ougazzader, A ^a   Huet, F ^a   Carre M ^a   Carenco, A ^a   Henry, M ^a   Sorel, Y ^a   Kerdile, J F ^a   Jeanney, E ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY RESPONSE; LIGHT ABSORPTION; OPTICAL WAVEGUIDES; PHASE MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

DRIVE VOLTAGE; QUANTUM CONFINED STARK EFFECT; RIDGE WAVEGUIDE ELECTROABSORPTION MODULATOR;

LIGHT MODULATORS;

EID: 0027695055     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.250046     Document Type: Article

References (9)

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