Appearance of single-crystalline properties in fine-patterned si thin film transistors (Tfts) by solid phase crystallization (spc)

Japanese Journal of Applied Physics

Volumn 32, Issue 11 A, 1993, Pages L1584-L1587

  Noguchi, Takashi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Gate voltage swing; Grain size; Mobility; Polysilicon; Single crystal; TFT; Uniformity

Indexed keywords

CRYSTALLIZATION; CRYSTALS; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; THERMAL EFFECTS; THIN FILM DEVICES; TRANSISTORS;

CONDUCTION MECHANISM; GATE VOLTAGE SWING; POLYSILICON; SINGLE CRYSTAL; SOLID PHASE CRYSTALLIZATION; THIN FILM TRANSISTORS (TFT);

SEMICONDUCTING SILICON;

EID: 0027694801     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L1584     Document Type: Article

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