New silicon drift detector design for diminishing lateral diffusion

Nuclear Inst. and Methods in Physics Research, A

Volumn 335, Issue 1-2, 1993, Pages 271-275

  Hijzen, E A ^a   Schooneveld, E M ^a   van Eijk, C W E ^a   Hollander, R W ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; ION IMPLANTATION; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; SEMICONDUCTING SILICON;

DRIFT DIRECTION; LATERAL DIFFUSION; SILICON DRIFT DETECTOR;

PARTICLE DETECTORS;

EID: 0027684840     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(93)90281-L     Document Type: Article

References (4)

1. SPIE
2. Book of Abstracts