Enhanced luminescence efficiency in growth interrupted single quantum wells by atomic hydrogen

Journal De Physique. IV : JP

Volumn 3, Issue 5, 1993, Pages 441-444

  Murray, R ^a   Mookherjee, P B ^a   Yoshinaga, A ^a   Dawson, P ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; HYDROGEN; INTERFACES (MATERIALS); LUMINESCENCE; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES;

ALUMINUM GALLIUM ARSENIDE/GALLIUM ARSENIDE HETEROINTERFACES; HYDROGEN PLASMA; MULTIPLE NARROW EMISSION LINE SPECTRA; NONRADIATIVE CENTRES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0027684437     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1993595     Document Type: Article

References (13)