Very High-Power-Density CW Operation of GaAs/AlGaAs Microwave Heterojunction Bipolar Transistors

IEEE Electron Device Letters

Volumn 14, Issue 10, 1993, Pages 493-495

  Bayraktaroglu, Burhan ^a   Barrette, J ^b   Kehias, L ^b   Huang, Chern I ^b   Fitch, R ^b   Neidhard, R ^b   Scherer, R ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; GATES (TRANSISTOR); HEAT RESISTANCE; HETEROJUNCTIONS; MICROWAVE DEVICES; RESISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

BALLAST RESISTORS; HOT SPOTS; INTERNAL DEVICE CURRENTS; MICROWAVE HETEROJUNCTION BIPOLAR TRANSISTORS; NOVEL HEAT SPREADING TECHNIQUE; POWER DENSITY; THERMAL INSTABILITY;

BIPOLAR TRANSISTORS;

EID: 0027681861     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.244741     Document Type: Article

References (7)

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