Annealing-Temperature Dependence of the Thermal Conductivity of LPCVD Silicon-Dioxide Layers

IEEE Electron Device Letters

Volumn 14, Issue 10, 1993, Pages 490-492

  Goodson, K E ^a   Flik, M I ^a   Su, L T ^a   Antoniadis, Dimitri A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

ANNEALING TEMPERATURE DEPENDENCE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SILICON DIOXIDE LAYERS; THERMAL OXIDE LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0027680846     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.244740     Document Type: Article

References (8)

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