Record low threshold current in microcavity surface-emitting laser

Japanese Journal of Applied Physics

Volumn 32, Issue 10 B, 1993, Pages L1533-L1534

  Numai, Takahiro ^a   Kawakami, Takeshi ^a   Yoshikawa, Takashi ^a   Sugimoto, Mitsunori ^a   Sugimoto, Yoshimasa ^a   Yokoyama, Hiroyuki ^a   Kasahara, Kenichi ^a   Asakawa, Kiyoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Microcavity; Surface emitting laser; Threshold current

Indexed keywords

ELECTRIC PROPERTIES; FABRICATION; MOLECULAR BEAM EPITAXY; SOLID STATE PHYSICS;

AIRPOST; LOW THRESHOLD CURRENT; MICROCAVITY; REACTIVE ION BEAM ETCHING; SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0027680283     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L1533     Document Type: Article

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