Structure of the U-band in neutron irradiated MOVPE grown N-GaAs epilayers

Electronics Letters

Volumn 29, Issue 22, 1993, Pages 1994-1996

  Webb, J B ^a   Yousefi, G H ^a   Khanna, S M ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Gallium arsenide; Semiconductor devices and materia; Vapour phase epitaxial growth

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; CURVE FITTING; EPITAXIAL GROWTH; MATHEMATICAL MODELS; RADIATION EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS;

BROAD U-BAND STRUCTURE; NEUTRON FLUENCES; NEUTRON IRRADIATED EPILAYERS;

SEMICONDUCTOR GROWTH;

EID: 0027678968     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931328     Document Type: Article

References (5)

1. MARTIN, G.M., ESTÈVE, E., LANGDALE. P., and MAKRAM-EBEID, S.: ‘Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materials’, J. Appl. Phys., 1984, 5, (10), pp. 2655-2657
2. MAGNO, R., SPENCER. M., GiESSNER, J.G., and WEBER, E.R.: Transient capacitance measurements on neutron irradiated gallium aresnide’. 13th Int. Conf. on Defects in Semiconductors, KIMERLING, L.C., and PARSEY, J.M. (Eds): (Metallurigical Soc. of AIME, 1984), pp. 981-987
3. MARTIN, G.M., and MAKRAM-EBEID, S.: ‘Manifestations of deep level point defects in GaAs’, Physica, 1983, 116B, pp. 371-383
4. MARTIN, G.M., MITONNEAU, A., and MIRCEA, A.: ‘Electron traps in bulk and epitaxial GaAs crystals’, Electron. Lett., 1977, 13, pp. 191-193
5. JORIO, A., REJEB, C., PARENTEAU, M., CARLONE, C., and KHANNA, S.M.: ‘Radiation induced carrier enhancement and intrinsic defect transformation in n-GaAs’, J. Appl. Phys., 1993, 74, (4), pp. 2310-2317