High-power high-gain monolithically integrated preamplifier/power amplifier

Electronics Letters

Volumn 29, Issue 22, 1993, Pages 1981-1983

  Yeh, P S ^a   Wu, I F ^a   Jiang, S ^a   Dagenais, M ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

Integrated optoectronics; Optical amplifiers; Semiconductor lasers

Indexed keywords

DIFFRACTION GRATINGS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL FREQUENCY CONVERSION; POWER AMPLIFIERS; PUMPING (LASER); SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

DIFFRACTION LIMITED SINGLE LOBE; INDEX GUIDED SINGLE LATERAL MODE OPTICAL PREAMPLIFIER; POWER TAPERED SEMICONDUCTOR LASER AMPLIFIER;

INTEGRATED OPTOELECTRONICS;

EID: 0027678918     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931319     Document Type: Article

References (8)

1. GOLDBERG, L., and MEHUYS, D.; ‘21W broad area near-diffraction-limited semiconductor amplifer’, Appl. Phys. Lett., 1992, 61, (6), pp. 633-635
2. GOLDBERG, L., MEHUYS, D., and HALL, D.C.: ‘3.3W CW diffraction limited broad area semiconductor amplifier’, Electron. Lett., 1992, 28, pp. 1082-1084
3. KINTZER, E.S., WALPOLE, J.N., CHINN, S.R., WANG, C.A., and MISSAG, L.J.: ‘High-power, strained-layer amplifiers and lasers with tapered gain regions’, IEEE Photonics Technol. Lett., 1993, 5, (6), pp. 605-608
4. MEHUYS, D., GOLDBERG, L., WAARTS, R., and WELCH, D.F.; ‘4.5W CW near-diffracrion-limited tapered-stripe semiconductor optical amplifier’. Electron. Lett., 1993, 29, (2), pp. 219-221
5. MEHUYS, D., WFXCH, D.F., and GOLDBERG, L.: ‘2.0W CW diffraction-limited tapered amplifier with double injection’. Electron. Lett., 1992, 28, pp. 1944-1946
6. PARKE, R., WELCH, D.F., O'BRIEN, S., and LANG, R.: ‘3.0W CW diffraction-limited performance from a monolithically integrated master oscillator power amplifier’. Tech. Dig. Conf. on Lasers and Electro-optics, 1993, Paper CTuI4, pp. 108-109
7. WALPOLE, J.N., KINTZER, E.S., CHINN, S.R., and WANG, C.A.: ‘Highpower strained-layer InGaAs/AlGaAs tapered traveling wave amplifier’, Appl. Phys. Lett., 1992, 61, (7), pp. 740-742
8. WU. I.-F., RIANT, I., VERDIELL, J.-M., and DAGENAiS, M.: ‘Real-time in situ monitoring of antireflection coatings for semiconductor laser amplifiers by ellipsometry’, IEEE Photonics Technol. Lett., 4, (9), pp. 991-993