RuO2 films by metal-organic chemical vapor deposition

Journal of Materials Research

Volumn 8, Issue 10, 1993, Pages 2644-2648

  Si, Jie ^a   Desu, Seshu B ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRIC CONDUCTIVITY; FILM GROWTH; OPTICAL PROPERTIES; PRESSURE EFFECTS; SILICA; SILICON; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

BIS(CYCLOPENTADIENYL)RUTHENIUM; BUBBLER TEMPERATURE; DEPOSITION TEMPERATURE; DILUTE GAS FLOW RATES; HOT WALL METALORGANIC CHEMICAL VAPOR DEPOSITION; THIN RUTHENIUM DIOXIDE FILMS;

RUTHENIUM COMPOUNDS;

EID: 0027678021     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/JMR.1993.2644     Document Type: Article

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