The Physics of Macropore Formation in Low Doped n-Type Silicon

Journal of the Electrochemical Society

Volumn 140, Issue 10, 1993, Pages 2836-2843

  Lehmann, V ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTROCHEMISTRY; ELECTRODES; PHYSICS;

MACROPORE FORMATION; N TYPE SILICON;

SEMICONDUCTING SILICON;

EID: 0027677480     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2220919     Document Type: Article

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