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Journal of Materials Science: Materials in Electronics

Volumn 4, Issue 3, 1993, Pages 215-224

Thermodynamic properties of AsH3 and its subhydrides

(2) Jordan, A S a Robertson Jr , A b

a LUCENT TECHNOLOGIES (United States)

b Engineering Research Center ^* (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; ENTROPY; FILM GROWTH; HYDRIDES; MOLECULAR BEAM EPITAXY; PYROLYSIS; SEMICONDUCTING FILMS; SPECIFIC HEAT; THERMAL EFFECTS; THERMODYNAMICS;

ARSENIC HYDRIDES; ENTHALPY; FREE ENERGY FUNCTION; METALORGANIC CHEMICAL VAPOR DEPOSITION; METALORGANIC MOLECULAR BEAM EPITAXY;

ARSENIC COMPOUNDS;

EID: 0027667981 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/BF00224744 Document Type: Article

Times cited : (13)

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