Electro-optical effect of Bi4Ge3O12 crystals for optical voltage sensors

Japanese Journal of Applied Physics

Volumn 32, Issue 9, 1993, Pages 4288-4291

  Kamada, Osamu ^a   Kakishita, Kazuhiko ^a  

^a Employment Promotion Project Corporation   (Japan)

Author keywords

Bi4Ge3O12; DC drift phenomenon; Electro optical effect; Optical voltage sensor; Photorefrac tive effect; Piezoelectricity

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC SPACE CHARGE; LIGHT REFRACTION; OPTICAL DEVICES; OXIDES; POLARIZATION; RELAXATION PROCESSES; SENSORS; THERMAL EFFECTS;

BISMUTH GERMANIUM OXIDE; DC DRIFT PHENOMENON; OPTICAL VOLTAGE SENSOR; PHOTOREFRACTIVE EFFECT;

ELECTROOPTICAL MATERIALS;

EID: 0027663590     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.4288     Document Type: Article

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