Characterization of Phosphorus Pile-Up at the SiO2/Si Interface

Journal of the Electrochemical Society

Volumn 140, Issue 9, 1993, Pages 2679-2682

  Sato, Yoshiyuki ^a   Imai, Kazuo ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); OXIDATION; PHOSPHORUS; SILICON;

DOPING CONCENTRATION; PHOSPHORUS PILE UP; SILICON WAFERS;

INTERFACES (MATERIALS);

EID: 0027662827     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2220885     Document Type: Article

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