Enhanced Hot-Carrier Degradation Due to Water-Related Components in TEOS/O3 Oxide and Water Blocking with ECR-SiO2 Film

IEEE Transactions on Electron Devices

Volumn 40, Issue 9, 1993, Pages 1682-1687

  Shimoyama, Nobuhiro ^a   Machida, Katsuyuki ^a   Takahashi, Jun ichi ^a   Murase, Katsumi ^a   Minegishi, Kazushige ^a   Tsuchiya, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; OXIDES; OZONE; SEMICONDUCTING SILICON COMPOUNDS;

DANGLING BONDS; ENHANCED HOT CARRIER DEGRADATION; ESR MEASUREMENTS; HOT ELECTRON TRAPPING; INTERVAL DIELECTRIC; SPIN DENSITY; TETRA-ETHOXYSILANE; WATER-RELATED COMPONENTS;

MOSFET DEVICES;

EID: 0027657052     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.231575     Document Type: Article

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