|
|
Volumn 191, Issue 1-2, 1993, Pages 83-89
|
|
Formation of optical gain due to exciton localization in CdxZn1-xS-ZnS strained-layer quantum wells
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
COMPOSITION EFFECTS;
ELECTRON ENERGY LEVELS;
ENERGY ABSORPTION;
EXCITONS;
INTERFACES (MATERIALS);
LUMINESCENCE;
OPTICAL PROPERTIES;
PHASE SPACE METHODS;
RESONANCE;
SEMICONDUCTING ZINC COMPOUNDS;
SPECTRUM ANALYSIS;
STRAIN;
CADMIUM ZINC SULFIDE/ZINC SULFIDE;
ENERGY SHIFTS;
EXCITON LOCALIZATION;
LOCALIZED EXCITON STATES;
OPTICAL GAIN;
PHASE SPACE FILLING EFFECTS;
STIMULATED EMISSION;
STRAINED LAYER QUANTUM WELLS;
SEMICONDUCTOR QUANTUM WELLS;
|
|
EID: 0027656804
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/0921-4526(93)90180-E Document Type: Article |
|
Times cited : (25)
|
|
References (20)
|
