Successive Charging/Discharging of Gate Oxides in SOI MOSFET’s by Sequential Hot-Electron Stressing of Front/Back Channel

IEEE Electron Device Letters

Volumn 14, Issue 9, 1993, Pages 435-437

  Campisi, George J ^b   Hughes, Harold L ^b  

^a GEORGE MASON UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); HOT CARRIERS; SILICON ON INSULATOR TECHNOLOGY;

BACK CHANNEL BASED ERASING SCHEMES; CHARGING/DISCHARGING; FRONT/BACK CHANNEL; GATE OXIDES; HOLE INJECTION; SEQUENTIAL HOT ELECTRON STRESSING;

MOSFET DEVICES;

EID: 0027656743     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.244715     Document Type: Article

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