Influence of the interface-state density on the electron mobility in silicon inversion layers

Journal of Electronic Materials

Volumn 22, Issue 9, 1993, Pages 1159-1163

  Banqueri, J ^a   Gamiz F ^a   Carceller, J E ^a   Cartujo, P ^a   Lopez Villanueva J A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Interface state density; inversion layer mobility; MOSFET; Si

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRIC FIELDS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOSFET DEVICES; PHONONS; SCATTERING; TEMPERATURE; THERMAL EFFECTS; TRANSPORT PROPERTIES;

COULOMB SCATTERING; ELECTRON MOBILITY; INTERFACE STATE DENSITY; PHONON SCATTERING; SILICON INVERSION LAYERS; TEMPERATURE RANGE; TRANSVERSE ELECTRIC FIELD;

SEMICONDUCTING SILICON;

EID: 0027656648     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02817689     Document Type: Article

References (34)

1. Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer
2. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
3. A mobility model for carriers in the MOS inversion layer
4. A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation
5. Temperature dependence of scattering in the inversion layer
6. Analysis of the effects of constant-current Fowler–Nordheim-tunneling injection with charge trapping inside the potential barrier