Properties Of A Tunneling Injection Quantum-Well Laser: Recipe For A “Cold” Device With A Large Modulation Bandwidth

IEEE Photonics Technology Letters

Volumn 5, Issue 8, 1993, Pages 870-872

  Sun, H C ^a   Davis, L ^a   Sethi, S ^a   Singh, J ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BANDWIDTH COMPRESSION; CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; ELECTRON RESONANCE; ELECTRON TUNNELING; GAIN MEASUREMENT; MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

AUGER RECOMBINATION RATES; LARGE MODULATION BANDWIDTH; TUNNELING INJECTION QUANTUM WELL LASERS;

INJECTION LASERS;

EID: 0027650035     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.238238     Document Type: Article

References (8)

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