Composition grading for base transit time minimization in SiGe-base heterojunction bipolar transistors

Solid State Electronics

Volumn 36, Issue 8, 1993, Pages 1161-1164

  Winterton, S S ^a   Peters, C J ^a   Tarr, N G ^a  

^a CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR JUNCTIONS;

BANDGAP; BASE TRANSIT TIME; GERMANIUM CONCENTRATION;

BIPOLAR TRANSISTORS;

EID: 0027650029     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90197-X     Document Type: Article

References (9)

1. Optimum doping distribution for minimum base transit time